Invention Grant
- Patent Title: Method providing an epitaxial growth having a reduction in defects and resulting structure
- Patent Title (中): 提供具有减少缺陷和所得结构的外延生长的方法
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Application No.: US14056026Application Date: 2013-10-17
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Publication No.: US09099309B2Publication Date: 2015-08-04
- Inventor: Song Guo , Yushi Hu , Roy Meade , Sanh D. Tang , Michael P. Violette , David H. Wells
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/02 ; H01L29/04 ; H01L29/06 ; H01L21/762
Abstract:
Disclosed are methods and resulting structures which provide an opening for epitaxial growth, the opening having an associated projection for reducing the size of the contact area on a substrate at which growth begins. During growth, the epitaxial material grows vertically from the contact area and laterally over the projection. The projection provides a stress relaxation region for the lateral growth to reduce dislocation and stacking faults at the side edges of the grown epitaxial material.
Public/Granted literature
- US20150108600A1 METHOD PROVIDING AN EPITAXIAL GROWTH HAVING A REDUCTION IN DEFECTS AND RESULTING STRUCTURE Public/Granted day:2015-04-23
Information query
IPC分类:
