Invention Grant
US09099329B2 In nanowire, device using the same and method of manufacturing in nanowire
有权
在纳米线中，使用相同的器件和纳米线制造方法
- Patent Title: In nanowire, device using the same and method of manufacturing in nanowire
- Patent Title (中): 在纳米线中，使用相同的器件和纳米线制造方法
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Application No.: US13782864Application Date: 2013-03-01
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Publication No.: US09099329B2Publication Date: 2015-08-04
- Inventor: Hee Suk Chung , Gyu Seok Kim , Han Wool Kang , Kyung Ho Lee , Mi Yang Kim , Suk Jin Ham
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2012-0131645 20121120
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/033 ; B82Y10/00 ; B82Y40/00 ; H01L29/66 ; H01L29/775 ; H01L21/02 ; H01L33/18
Abstract:
There is provided an In nanowire including a substrate, an indium thin film formed on the substrate, an insulating film formed on the indium thin film and having at least one through hole through formation of a pattern, and an In nanowire vertically protruded from the indium thin film through the at least one through hole.
Public/Granted literature
- US20140138611A1 IN NANOWIRE, DEVICE USING THE SAME AND METHOD OF MANUFACTURING In NANOWIRE Public/Granted day:2014-05-22
Information query
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