Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US14148912Application Date: 2014-01-07
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Publication No.: US09099361B2Publication Date: 2015-08-04
- Inventor: Shunpei Yamazaki , Yasuyuki Arai
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2000-128536 20000427
- Main IPC: H01L29/04
- IPC: H01L29/04 ; G02F1/133 ; H01L27/12 ; G02F1/1335 ; G02F1/1362 ; H01L29/786

Abstract:
An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.
Public/Granted literature
- US20140117369A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-05-01
Information query
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