Invention Grant
US09099376B1 Laser direct patterning of reduced-graphene oxide transparent circuit
有权
减少石墨烯氧化物透明电路的激光直接图案化
- Patent Title: Laser direct patterning of reduced-graphene oxide transparent circuit
- Patent Title (中): 减少石墨烯氧化物透明电路的激光直接图案化
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Application No.: US14297644Application Date: 2014-06-06
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Publication No.: US09099376B1Publication Date: 2015-08-04
- Inventor: Kam-Chuen Yung , Hai-Ming Liem , Hang-Shan Choy
- Applicant: Nano and Advanced Materials Institute Limited
- Applicant Address: HK Hong Kong
- Assignee: NANO AND ADVANCED MATERIALS INSTITUTE LIMITED
- Current Assignee: NANO AND ADVANCED MATERIALS INSTITUTE LIMITED
- Current Assignee Address: HK Hong Kong
- Agent Ella Cheong Hong Kong; Sam T. Yip
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/16 ; H01L21/02 ; H01L21/268

Abstract:
Reduced-graphene oxide circuits are directly patterned on glass substrate using an industrially available excimer laser system. A threshold of laser energy density is observed, which provide a clear differentiation on whether the graphene oxide is reduced. The highest conductivity measured is 7.142×103 S/m. The reduced-graphene oxide displays a transmittance greater than 80% across the entire range from 450 to 800 nm. The outstanding electrical, optical, and morphological properties have enabled reduced-graphene oxide to display promising applications, and this nano-processing method makes reduced-graphene oxide even more attractive when used as a transparent electrode for touch screens or in other applications.
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