Invention Grant
US09099393B2 Enabling enhanced reliability and mobility for replacement gate planar and FinFET structures
有权
为更换栅极平面和FinFET结构提供增强的可靠性和移动性
- Patent Title: Enabling enhanced reliability and mobility for replacement gate planar and FinFET structures
- Patent Title (中): 为更换栅极平面和FinFET结构提供增强的可靠性和移动性
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Application No.: US13959375Application Date: 2013-08-05
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Publication No.: US09099393B2Publication Date: 2015-08-04
- Inventor: Takashi Ando , Eduard A. Cartier , Kisik Choi , Wing L. Lai , Vijay Narayanan , Ravikumar Ramachandran
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDARIES Inc.
- Applicant Address: US NY Armonk KY Cayman Islands
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES Inc.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES Inc.
- Current Assignee Address: US NY Armonk KY Cayman Islands
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L27/092
Abstract:
A method for semiconductor fabrication includes forming at least one of a diffusion barrier layer and a metal containing layer over a dielectric layer in a gate cavity. A first anneal is performed to diffuse elements from the at least one of the diffusion barrier layer and the metal containing layer into the dielectric layer. The metal containing layer and the diffusion barrier layer are removed. A second anneal is performed to adjust diffusion of the elements in the dielectric layer to provide a gate dielectric region.
Public/Granted literature
- US20150035073A1 ENABLING ENHANCED RELIABILITY AND MOBILITY FOR REPLACEMENT GATE PLANAR AND FINFET STRUCTURES Public/Granted day:2015-02-05
Information query
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