Invention Grant
- Patent Title: Post-passivation interconnect structure and method of forming the same
- Patent Title (中): 后钝化互连结构及其形成方法
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Application No.: US13291508Application Date: 2011-11-08
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Publication No.: US09099396B2Publication Date: 2015-08-04
- Inventor: Yi-Wen Wu , Zheng-Yi Lim , Ming-Che Ho , Chung-Shi Liu
- Applicant: Yi-Wen Wu , Zheng-Yi Lim , Ming-Che Ho , Chung-Shi Liu
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L23/485
- IPC: H01L23/485 ; H01L23/29 ; H01L23/31 ; H01L23/525 ; H01L23/00
Abstract:
A semiconductor device includes a conductive layer formed on the surface of a post-passivation interconnect (PPI) structure by an immersion tin process. A polymer layer is formed on the conductive layer and patterned with an opening to expose a portion of the conductive layer. A solder bump is then formed in the opening of the polymer layer to electrically connect to the PPI structure.
Public/Granted literature
- US20130113094A1 POST-PASSIVATION INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2013-05-09
Information query
IPC分类:
