Invention Grant
US09099430B2 ZrO-based high K dielectric stack for logic decoupling capacitor or embedded DRAM
有权
用于逻辑去耦电容器或嵌入式DRAM的基于ZrO的高K电介质堆叠
- Patent Title: ZrO-based high K dielectric stack for logic decoupling capacitor or embedded DRAM
- Patent Title (中): 用于逻辑去耦电容器或嵌入式DRAM的基于ZrO的高K电介质堆叠
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Application No.: US14135491Application Date: 2013-12-19
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Publication No.: US09099430B2Publication Date: 2015-08-04
- Inventor: Imran Hashim , Xiangxin Rui
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L49/02 ; H01L27/108
Abstract:
A zirconium oxide based dielectric material is used in the formation of decoupling capacitors employed in microelectronic logic circuits. In some embodiments, the zirconium oxide based dielectric is doped. In some embodiments, the dopant includes at least one of aluminum, silicon, or yttrium. In some embodiments, the zirconium oxide based dielectric is formed as a nanolaminate of zirconium oxide and a dopant metal oxide.
Public/Granted literature
- US20150179730A1 ZrO-Based High K Dielectric Stack for Logic Decoupling Capacitor or Embedded DRAM Public/Granted day:2015-06-25
Information query
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