Invention Grant
US09099444B2 3D integrated circuit package with through-mold first level interconnects
有权
3D集成电路封装,具有通用模具一级互连
- Patent Title: 3D integrated circuit package with through-mold first level interconnects
- Patent Title (中): 3D集成电路封装,具有通用模具一级互连
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Application No.: US13995778Application Date: 2011-12-22
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Publication No.: US09099444B2Publication Date: 2015-08-04
- Inventor: Debendra Mallik , Robert L. Sankman
- Applicant: Debendra Mallik , Robert L. Sankman
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- International Application: PCT/US2011/066986 WO 20111222
- International Announcement: WO2013/095546 WO 20130627
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/48 ; H01L23/31 ; H01L25/065 ; H01L23/00 ; H01L25/00 ; H01L21/56

Abstract:
3D integrated circuit packages with through-mold first level interconnects and methods to form such packages are described. For example, a semiconductor package includes a substrate. A bottom semiconductor die has an active side with a surface area. The bottom semiconductor die is coupled to the substrate with the active side distal from the substrate. A top semiconductor die has an active side with a surface area larger than the surface area of the bottom semiconductor die. The top semiconductor die is coupled to the substrate with the active side proximate to the substrate. The active side of the bottom semiconductor die is facing and conductively coupled to the active side of the top semiconductor die. The top semiconductor die is conductively coupled to the substrate by first level interconnects that bypass the bottom semiconductor die.
Public/Granted literature
- US20140217585A1 3D INTEGRATED CIRCUIT PACKAGE WITH THROUGH-MOLD FIRST LEVEL INTERCONNECTS Public/Granted day:2014-08-07
Information query
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