Invention Grant
- Patent Title: Molded semiconductor package with backside die metallization
- Patent Title (中): 具有背面金属化的模制半导体封装
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Application No.: US13964153Application Date: 2013-08-12
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Publication No.: US09099454B2Publication Date: 2015-08-04
- Inventor: Ulrich Wachter , Veronika Huber , Thomas Kilger , Ralf Otremba , Bernd Stadler , Dominic Maier , Klaus Schiess , Andreas Schlögl , Uwe Wahl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00 ; H01L23/36 ; H01L21/56

Abstract:
A semiconductor package is manufactured by providing a semiconductor die with a terminal at a first side of the die, providing a material coupled to the die at an opposing second side of the die and embedding the die in a molding compound so that the die is covered by the molding compound on all sides except the first side. The molding compound is thinned at a side of the molding compound adjacent the second side of the die, to expose the material at the second side of the die without exposing the second side of the die. An electrical connection is formed to the terminal at the first side of the die. In the case of a transistor die, the terminal can be a source terminal and the transistor die can be attached source-down to a metal block such as a die paddle of a lead frame.
Public/Granted literature
- US20150041967A1 Molded Semiconductor Package with Backside Die Metallization Public/Granted day:2015-02-12
Information query
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