Invention Grant
US09099472B2 Semiconductor constructions, methods of forming conductive structures and methods of forming DRAM cells
有权
半导体结构，形成导电结构的方法和形成DRAM单元的方法
- Patent Title: Semiconductor constructions, methods of forming conductive structures and methods of forming DRAM cells
- Patent Title (中): 半导体结构，形成导电结构的方法和形成DRAM单元的方法
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Application No.: US14063981Application Date: 2013-10-25
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Publication No.: US09099472B2Publication Date: 2015-08-04
- Inventor: Jaydeb Goswami , Hung Ming Tsai , Duane M. Goodner
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L23/532
- IPC: H01L23/532 ; C23C16/04 ; H01L27/108 ; H01L21/74 ; H01L21/768
Abstract:
Some embodiments include methods of forming conductive structures. An electrically conductive material may be deposited with a first deposition method. The first deposition method has a first deposition rate and forms a first portion of a conductive structure. A second portion of the conductive structure may be formed by depositing the electrically conductive material with a second deposition method having a second deposition rate. The second deposition rate may be different from the first deposition rate by at least about a factor of 3. In some embodiments, a region of the conductive structure is utilized as a transistor gate of a DRAM cell. Some embodiments include semiconductor constructions.
Public/Granted literature
- US20140048943A1 Semiconductor Constructions, Methods of Forming Conductive Structures and Methods of Forming DRAM Cells Public/Granted day:2014-02-20
Information query
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