Invention Grant
- Patent Title: Bipolar junction transistor with spacer layer
- Patent Title (中): 具有间隔层的双极结晶体管
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Application No.: US14048940Application Date: 2013-10-08
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Publication No.: US09099517B2Publication Date: 2015-08-04
- Inventor: Andrei Konstantinov
- Applicant: Fairchild Semiconductor Corporation
- Applicant Address: US CA San Jose
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01L29/73
- IPC: H01L29/73 ; H01L29/66 ; H01L29/732 ; H01L29/10 ; H01L29/16 ; H01L29/04 ; H01L29/06 ; H01L29/08
Abstract:
New designs for silicon carbide (SiC) bipolar junction transistors (BJTs) and new methods of manufacturing such SiC BJTs are described. The SiC BJT comprises a collector region, a base region and an emitter region disposed as a stack, the emitter region and part of the base region forming a mesa. The intrinsic part of the base region includes a first portion having a first doping concentration and a second portion having a second doping concentration lower than the first doping concentration. Further, the second portion is vertically disposed between the first portion and the emitter region in the stack.
Public/Granted literature
- US20140034968A1 BIPOLAR JUNCTION TRANSISTOR WITH SPACER LAYER Public/Granted day:2014-02-06
Information query
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