Invention Grant
US09099523B2 ESD protection circuit with isolated SCR for negative voltage operation
有权
具有隔离SCR的ESD保护电路用于负电压操作
- Patent Title: ESD protection circuit with isolated SCR for negative voltage operation
- Patent Title (中): 具有隔离SCR的ESD保护电路用于负电压操作
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Application No.: US13668022Application Date: 2012-11-02
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Publication No.: US09099523B2Publication Date: 2015-08-04
- Inventor: Akram A. Salman , Farzan Farbiz , Amitava Chatterjee , Xiaoju Wu
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L27/02
Abstract:
A semiconductor controlled rectifier comprises a first lightly doped region (100) having a first conductivity type (N) and a first heavily doped region (108) having a second conductivity type (P) formed within the first lightly doped region. A second lightly doped region (104) having the second conductivity type is formed proximate the first lightly doped region. A second heavily doped region (114) having the first conductivity type is formed within the second lightly doped region. A buried layer (101) having the first conductivity type is formed below the second lightly doped region and electrically connected to the first lightly doped region. A third lightly doped region (102) having the second conductivity type is formed between the second lightly doped region and the buried layer. A fourth lightly doped region (400) having the second conductivity type is formed between the second lightly doped region and the buried layer.
Public/Granted literature
- US20140124828A1 ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERATION Public/Granted day:2014-05-08
Information query
IPC分类:
