Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14170062Application Date: 2014-01-31
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Publication No.: US09099541B2Publication Date: 2015-08-04
- Inventor: Ji Hwang Kim , Sunpil Youn , Sangwon Kim , Kwang-chul Choi , Tae Hong Min
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2011-0023537 20110316
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/31 ; H01L23/36 ; H01L23/48 ; H01L21/56 ; H01L23/498
Abstract:
A semiconductor device includes a substrate having a first side and a second side such that the first and second sides face each other, a through via plug penetrating the substrate, an insulating film liner, and an antipollution film. The insulating film liner is between the through via plug and the substrate and the insulating film liner has a recessed surface with respect to the second side. The antipollution film covers the second side and the antipollution film is on the recessed surface and between the through via plug and the substrate.
Public/Granted literature
- US20140148007A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-05-29
Information query
IPC分类:
