Invention Grant
- Patent Title: RAM memory point with a transistor
- Patent Title (中): RAM存储点与晶体管
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Application No.: US14349852Application Date: 2012-10-04
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Publication No.: US09099544B2Publication Date: 2015-08-04
- Inventor: Noel Rodriguez , Francisco Gamiz , Sorin Ioan Cristoloveanu
- Applicant: UNIVERSIDAD DE GRANADA , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
- Applicant Address: ES Granada FR Paris Cedex
- Assignee: UNIVERSIDAD DE GRANADA,CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
- Current Assignee: UNIVERSIDAD DE GRANADA,CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
- Current Assignee Address: ES Granada FR Paris Cedex
- Agency: Howard IP Law Group, PC
- Priority: FR1158942 20111004
- International Application: PCT/FR2012/052246 WO 20121004
- International Announcement: WO2013/050707 WO 20130411
- Main IPC: H01L29/775
- IPC: H01L29/775 ; H01L29/78 ; G11C11/404 ; H01L21/84 ; H01L27/108 ; H01L27/12 ; H01L29/06
Abstract:
A memory cell formed of a semiconductor nanorod having its ends heavily doped to form source and drain regions and having its central portion including, between the source and drain regions, an N-type region surrounded on a majority of its periphery with a quasi-intrinsic P-type region, and wherein the P-type region itself is surrounded with an insulated gate.
Public/Granted literature
- US20140299835A1 RAM MEMORY POINT WITH A TRANSISTOR Public/Granted day:2014-10-09
Information query
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