Invention Grant
- Patent Title: Semiconductor device including a MOSFET
- Patent Title (中): 包括MOSFET的半导体器件
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Application No.: US14528177Application Date: 2014-10-30
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Publication No.: US09099550B2Publication Date: 2015-08-04
- Inventor: Nobuyuki Shirai , Nobuyoshi Matsuura , Yoshito Nakazawa
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2001-329620 20011026
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/78 ; H01L29/872 ; H01L27/06 ; H01L29/20 ; H01L29/423 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/40 ; H01L29/45 ; H01L29/47
Abstract:
A semiconductor device has a MOSFET and a Schottky barrier diode. A source electrode of the MOSFET is disposed over a main surface of the semiconductor substrate and is coupled to a source region in a well region of the semiconductor substrate. The Schottky barrier diode is adjacent to the MOSFET and includes a part of the source electrode and a part of the main surface of the semiconductor substrate.
Public/Granted literature
- US20150054069A1 SEMICONDUCTOR DEVICE INCLUDING A MOSFET Public/Granted day:2015-02-26
Information query
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