Transistors and electronic devices including the transistors

Invention Grant

US09099561B2 Transistors and electronic devices including the transistors 有权

Title translation: 晶体管和包括晶体管的电子器件

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Patent Title: Transistors and electronic devices including the transistors
Patent Title (中): 晶体管和包括晶体管的电子器件
Application No.: US13489888

Application Date: 2012-06-06
Publication No.: US09099561B2

Publication Date: 2015-08-04
Inventor: Hyun-suk Kim , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jong-baek Seon , Kyoung-seok Son , Won-mook Choi , Joon-seok Park , Mi-jeong Song
Applicant: Hyun-suk Kim , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jong-baek Seon , Kyoung-seok Son , Won-mook Choi , Joon-seok Park , Mi-jeong Song
Applicant Address: KR Gyeonggi-do KR Gyeonggi-do
Assignee: Samsung Electronics Co., Ltd.,Samsung Display Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.,Samsung Display Co., Ltd.
Current Assignee Address: KR Gyeonggi-do KR Gyeonggi-do
Agency: Harness, Dickey & Pierce
Priority: KR10-2011-0081814 20110817
Main IPC: H01L29/786
IPC: H01L29/786

Transistors and electronic devices including the transistors

Abstract:

A transistor may include a light-blocking layer that blocks light incident on a channel layer. The light-blocking layer may include a carbon-based material. The carbon-based material may include graphene oxide, graphite oxide, graphene or carbon nanotube (CNT). The light-blocking layer may be between a gate and at least one of the channel layer, a source and a drain.

Abstract(Chinese):

晶体管可以包括阻挡入射在沟道层上的光的遮光层。遮光层可以包括碳基材料。碳基材料可以包括氧化石墨烯，氧化石墨，石墨烯或碳纳米管（CNT）。遮光层可以在栅极和沟道层，源极和漏极中的至少一个之间。

Public/Granted literature

US20130043475A1 TRANSISTORS AND ELECTRONIC DEVICES INCLUDING THE TRANSISTORS Public/Granted day:2013-02-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/786	......薄膜晶体管