A method for forming a complementary metal oxide semiconductor (CMOS) semiconductor device includes forming laterally adjacent first and second active regions in a semiconductor layer of a silicon-on-insulator (SOI) wafer. A stress inducing layer is formed above the first active region to impart stress thereto. Trench isolation regions are formed bounding the first active region and adjacent portions of the stress inducing layer. The stress inducing layer is removed leaving the trench isolation regions to maintain stress imparted to the first active region.