Invention Grant
- Patent Title: Nitride semiconductor light-emitting element
- Patent Title (中): 氮化物半导体发光元件
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Application No.: US13779823Application Date: 2013-02-28
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Publication No.: US09099594B2Publication Date: 2015-08-04
- Inventor: Akira Tanaka
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Priority: JP2012-156687 20120712
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/14 ; H01L33/38 ; H01L33/42 ; H01L33/08

Abstract:
According to one embodiment, a nitride-semiconductor light-emitting element includes a laminated body, a pair of two transparent conductive layers, a current-blocking layer, a first electrode, and a second electrode. The laminated body includes a nitride semiconductor, a first layer including a first conductivity-type layer, a second layer including a second conductivity-type layer, and a light-emitting layer sandwiched between the first layer and the second layer. The two transparent conductive layers are laterally separated from each other by a prescribed region. The prescribed region is a portion of a surface of the first layer. The current-blocking layer covers respective surfaces of the two transparent conductive layers.
Public/Granted literature
- US20140014895A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT Public/Granted day:2014-01-16
Information query
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