Invention Grant
- Patent Title: Nitride semiconductor light-emitting element having superior current spreading effect and method for manufacturing same
- Patent Title (中): 具有优异的电流扩散效应的氮化物半导体发光元件及其制造方法
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Application No.: US14237299Application Date: 2012-08-02
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Publication No.: US09099600B2Publication Date: 2015-08-04
- Inventor: Won-Jin Choi , Jung-Won Park
- Applicant: Won-Jin Choi , Jung-Won Park
- Applicant Address: KR Ansan-Si, Gyeonggi-Do
- Assignee: ILJIN LED CO., LTD.
- Current Assignee: ILJIN LED CO., LTD.
- Current Assignee Address: KR Ansan-Si, Gyeonggi-Do
- Agency: Lowe Hauptman & Ham, LLP
- Priority: KR10-2011-0078778 20110808
- International Application: PCT/KR2012/006178 WO 20120802
- International Announcement: WO2013/022227 WO 20130214
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/24 ; H01L21/00 ; H01L33/14 ; H01L33/32 ; H01L33/06
Abstract:
Disclosed are a nitride semiconductor light-emitting element having a superior current spreading effect as a result of using a current spreading part containing current spreading impurities, and a method for manufacturing same. The nitride semiconductor light-emitting element according to the present invention comprises: an n-type nitride layer; a current spreading part, which is formed from nitride comprising current spreading impurities, and which is disposed on the n-type nitride layer; an activation layer disposed on the current spreading part; and a p-type nitride layer disposed on the activation layer, wherein the current spreading impurities comprise carbon (C).
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