Invention Grant
- Patent Title: Photocoupler
- Patent Title (中): 光电耦合器
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Application No.: US14161872Application Date: 2014-01-23
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Publication No.: US09099602B2Publication Date: 2015-08-04
- Inventor: Yoshio Noguchi , Mami Yamamoto , Naoya Takai
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2013-180163 20130830
- Main IPC: H01L31/16
- IPC: H01L31/16 ; H01L31/14 ; H01L25/16

Abstract:
A photocoupler includes: a support substrate; a MOSFET; a light receiving element; a light emitting element; and a bonding layer. The support substrate includes an insulating layer, input and output terminals. The MOSFET is bonded to the support substrate. The MOSFET has a first surface having an operation region. The light receiving element includes p-n junction and is bonded to the MOSFET. The light receiving element has first and second surfaces. The first surface includes a light reception region, a first electrode, and a second electrode. The light emitting element is connected to the input terminal. The light emitting element has first and second surfaces. The first surface includes first and second electrodes. The second surface has a light emitting region. The bonding layer is configured to bond the light emitting element to the light reception region.
Public/Granted literature
- US20150060892A1 PHOTOCOUPLER Public/Granted day:2015-03-05
Information query
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