Invention Grant
- Patent Title: Semiconductor light emitting device and light emitting apparatus
- Patent Title (中): 半导体发光器件和发光装置
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Application No.: US13929431Application Date: 2013-06-27
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Publication No.: US09099629B2Publication Date: 2015-08-04
- Inventor: Jong In Yang , Yong Il Kim , Kwang Min Song , Wan Tae Lim , Se Jun Han , Hyun Kwon Hong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2012-0089024 20120814
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/267 ; H01L31/12 ; H01L33/00 ; H01L33/62 ; H01L33/20 ; H01L33/38 ; H01L33/44

Abstract:
A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.
Public/Granted literature
- US20140048838A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS Public/Granted day:2014-02-20
Information query
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