Invention Grant
US09099638B2 Vertical hall effect element with structures to improve sensitivity
有权
垂直霍尔效应元件与结构提高灵敏度
- Patent Title: Vertical hall effect element with structures to improve sensitivity
- Patent Title (中): 垂直霍尔效应元件与结构提高灵敏度
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Application No.: US13836869Application Date: 2013-03-15
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Publication No.: US09099638B2Publication Date: 2015-08-04
- Inventor: Yigong Wang , Richard B. Cooper
- Applicant: Yigong Wang , Richard B. Cooper
- Applicant Address: US MA Worcester
- Assignee: Allegro Microsystems, LLC
- Current Assignee: Allegro Microsystems, LLC
- Current Assignee Address: US MA Worcester
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L43/06
- IPC: H01L43/06 ; H01L27/22 ; H01L29/82 ; H01L43/14 ; G01R33/07

Abstract:
A vertical Hall Effect element includes one or more of: a low voltage P-well region disposed at a position between pickups of the vertical Hall Effect element, Light-N regions disposed under the pickups, a pre-epi implant region, or two epi regions to result in an improved sensitivity of the vertical Hall Effect element. A method results in the vertical Hall Effect element having the improved sensitivity.
Public/Granted literature
- US20140264667A1 Vertical Hall Effect Element With Structures to Improve Sensitivity Public/Granted day:2014-09-18
Information query
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