Invention Grant
- Patent Title: Method of etching a magnesium oxide film
- Patent Title (中): 蚀刻氧化镁膜的方法
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Application No.: US13777352Application Date: 2013-02-26
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Publication No.: US09099643B2Publication Date: 2015-08-04
- Inventor: Hitoshi Hatate , Atsuyoshi Tsunoda , Makoto Fukui , Shuji Okame , Ken Fujii
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L43/12 ; G11B5/39 ; G01R33/09
Abstract:
A magnetoresistive device includes an MR element including a metal layer, and an insulating portion made of magnesium oxide and in contact with the MR element. A method of manufacturing the magnetoresistive device includes the step of removing an unwanted magnesium oxide film that is formed by the magnesium oxide in the process of forming the insulating portion. In this step, the unwanted magnesium oxide film is wet etched by using an etchant containing an aqueous ammonia solution.
Public/Granted literature
- US20140242728A1 METHOD OF ETCHING A MAGNESIUM OXIDE FILM Public/Granted day:2014-08-28
Information query
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