Invention Grant
US09099646B2 Manufacturing method of non-volatile storage device, and non-volatile storage device
有权
非易失性存储设备的制造方法和非易失性存储设备
- Patent Title: Manufacturing method of non-volatile storage device, and non-volatile storage device
- Patent Title (中): 非易失性存储设备的制造方法和非易失性存储设备
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Application No.: US13778971Application Date: 2013-02-27
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Publication No.: US09099646B2Publication Date: 2015-08-04
- Inventor: Hideki Inokuma , Kazuhiko Yamamoto
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JPP2012-178331 20120810
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L45/00 ; H01L27/24

Abstract:
A manufacturing method includes forming a laminated body on a substrate. A mask layer is formed on the laminated body, and then a portion of the mask layer is removed to form an opening. Then, using the mask layer as a template, a first portion of the laminated body is removed to expose a portion of the substrate beneath the laminated body. The substrate is processed to alter the ratio between the size of mask opening and the removed first portion. A variable resistance layer is then deposited on exposed portions of the mask layer, the laminated body, and the substrate. Then the variable resistance layer is processed to remove at least a portion covering the substrate to permit contact with the underlying substrate. A second electrode layer is deposited to fill the removed portions of the laminated body.
Public/Granted literature
- US20140042383A1 MANUFACTURING METHOD OF NON-VOLATILE STORAGE DEVICE, AND NON-VOLATILE STORAGE DEVICE Public/Granted day:2014-02-13
Information query
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