Invention Grant
US09099646B2 Manufacturing method of non-volatile storage device, and non-volatile storage device 有权
非易失性存储设备的制造方法和非易失性存储设备

Manufacturing method of non-volatile storage device, and non-volatile storage device
Abstract:
A manufacturing method includes forming a laminated body on a substrate. A mask layer is formed on the laminated body, and then a portion of the mask layer is removed to form an opening. Then, using the mask layer as a template, a first portion of the laminated body is removed to expose a portion of the substrate beneath the laminated body. The substrate is processed to alter the ratio between the size of mask opening and the removed first portion. A variable resistance layer is then deposited on exposed portions of the mask layer, the laminated body, and the substrate. Then the variable resistance layer is processed to remove at least a portion covering the substrate to permit contact with the underlying substrate. A second electrode layer is deposited to fill the removed portions of the laminated body.
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