Invention Grant
- Patent Title: Inverter, NAND gate, and NOR gate
- Patent Title (中): 逆变器,NAND门和NOR门
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Application No.: US14049800Application Date: 2013-10-09
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Publication No.: US09099991B2Publication Date: 2015-08-04
- Inventor: Sang Hee Park , Chi Sun Hwang , Sung Min Yoon , Him Chan Oh , Kee Chan Park , Tao Ren , Hong Kyung Leem , Min Woo Oh , Ji Sun Kim , Jae Eun Pi , Byeong Hoon Kim , Byoung Gon Yu
- Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , Konkuk University Industrial Cooperation Corp
- Applicant Address: KR Daejeon KR Seoul
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE,KONKUK UNIVERSITY INDUSTRIAL COOPERATION CORP.
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE,KONKUK UNIVERSITY INDUSTRIAL COOPERATION CORP.
- Current Assignee Address: KR Daejeon KR Seoul
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2011-0026428 20110324; KR10-2011-0085561 20110826
- Main IPC: H03K19/20
- IPC: H03K19/20 ; H03K19/094 ; H03K3/012

Abstract:
Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.
Public/Granted literature
- US20140035621A1 INVERTER, NAND GATE, AND NOR GATE Public/Granted day:2014-02-06
Information query
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