Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13560194Application Date: 2012-07-27
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Publication No.: US09100000B2Publication Date: 2015-08-04
- Inventor: Jun Saito , Masuhisa Hirose
- Applicant: Jun Saito , Masuhisa Hirose
- Applicant Address: JP Toyota
- Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee Address: JP Toyota
- Agency: Oliff PLC
- Priority: JP2011-205745 20110921
- Main IPC: H03K17/00
- IPC: H03K17/00 ; H01L29/40 ; H01L29/739 ; H01L29/861 ; H01L29/06 ; H01L29/10

Abstract:
A semiconductor device may be provided with a semiconductor substrate, an insulating film disposed on a surface of the semiconductor substrate, at least one electrode disposed on a surface of the insulating film, and a voltage applying circuit configured to apply a first voltage to the at least one electrode. The semiconductor substrate may be provided with a cell region and a non-cell region adjacent to the cell region. The cell region is provided with a semiconductor element, and the non-cell region is provided with a withstand voltage structure. The insulating film may be disposed on a surface of the non-cell region. The at least one electrode may be electrically insulated from the semiconductor substrate. The voltage applying circuit may apply the first voltage to the electrode during at least a part of a first period in which a second voltage is not applied to the semiconductor element.
Public/Granted literature
- US20130069694A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-03-21
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