Invention Grant
- Patent Title: Adaptive bipolar junction transistor gain detection
- Patent Title (中): 自适应双极结晶体管增益检测
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Application No.: US13419329Application Date: 2012-03-13
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Publication No.: US09101015B2Publication Date: 2015-08-04
- Inventor: Liang Yan , Clarita C. Poon , Hien Huu Bui , Chuanyang Wang , Andrew Kwok-Cheung Lee , John William Kesterson
- Applicant: Liang Yan , Clarita C. Poon , Hien Huu Bui , Chuanyang Wang , Andrew Kwok-Cheung Lee , John William Kesterson
- Applicant Address: US CA Campbell
- Assignee: Dialog Semiconductor Inc.
- Current Assignee: Dialog Semiconductor Inc.
- Current Assignee Address: US CA Campbell
- Agency: Fenwick & West LLP
- Main IPC: H02M1/36
- IPC: H02M1/36 ; H05B33/08 ; H05B41/292 ; H05B41/392

Abstract:
A power converter that controls a collector current of a bipolar junction transistor (BJT) by controlling the base current to the BJT after having determined the gain of the BJT. A gain detection block determines a gain of the BJT during a first mode. A current calculation block generates a current setting for the base current based on the gain of the BJT determined by the gain detection block during a second mode distinct from the first mode. In some embodiments, the power converter may be included in a LED lamp system.
Public/Granted literature
- US20130242625A1 Adaptive Bipolar Junction Transistor Gain Detection Public/Granted day:2013-09-19
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