Invention Grant
- Patent Title: Imprinted bi-layer micro-structure method with bi-level stamp
- Patent Title (中): 双层印刷双层微结构方法
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Application No.: US14012240Application Date: 2013-08-28
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Publication No.: US09101056B2Publication Date: 2015-08-04
- Inventor: Ronald Steven Cok
- Applicant: Eastman Kodak Company
- Applicant Address: US NY Rochester
- Assignee: EASTMAN KODAK COMPANY
- Current Assignee: EASTMAN KODAK COMPANY
- Current Assignee Address: US NY Rochester
- Agent Raymond L. Owens
- Main IPC: H01B13/00
- IPC: H01B13/00 ; H05K1/02 ; H05K3/46 ; H05K3/12 ; H05K3/00 ; H05K1/09

Abstract:
A method of making an imprinted micro-wire structure includes providing a substrate having an edge area and a central area separate from the edge area and providing a first stamp and a multi-level second stamp. A curable bottom layer and multi-layer are provided on the substrate. A bottom-layer micro-channel is imprinted in the bottom layer. A multi-layer micro-channel and a top-layer micro-channel are imprinted in the multi-layer. Micro-wires are formed in each micro-channel. The bottom-layer micro-wire extends from the central area into the edge area. The multi-layer micro-wire contacts the bottom-layer micro-wire in the edge area. The top-layer micro-wire is over the central area and is separate from the multi-layer micro-wire and the bottom-layer micro-channel. The bottom-layer micro-wire is electrically connected to the multi-layer micro-wire and is electrically isolated from the top-layer micro-wire.
Public/Granted literature
- US20150060395A1 IMPRINTED BI-LAYER MICRO-STRUCTURE METHOD WITH BI-LEVEL STAMP Public/Granted day:2015-03-05
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