Invention Grant
- Patent Title: Processes for producing substrate for liquid ejection head
- Patent Title (中): 用于制造液体喷射头的基底的方法
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Application No.: US14283480Application Date: 2014-05-21
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Publication No.: US09102153B2Publication Date: 2015-08-11
- Inventor: Toshiyasu Sakai , Masataka Kato , Kenji Kumamaru
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2013-119767 20130606
- Main IPC: B41J2/16
- IPC: B41J2/16 ; H01J37/32

Abstract:
A process for producing a substrate for a liquid ejection head, including a step of forming a liquid supply port passing through a silicon substrate by dry etching, the step being a step of sequentially repeating the steps of (1) forming an etching protection film on the silicon substrate, (2) removing a bottom portion of the etching protection film, and (3) etching the silicon substrate, wherein a sheath formed in the step (2) is thicker than a sheath formed in the step (3).
Public/Granted literature
- US20140363907A1 PROCESSES FOR PRODUCING SUBSTRATE FOR LIQUID EJECTION HEAD Public/Granted day:2014-12-11
Information query
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