Invention Grant
- Patent Title: Film deposition apparatus
- Patent Title (中): 膜沉积装置
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Application No.: US12627144Application Date: 2009-11-30
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Publication No.: US09103030B2Publication Date: 2015-08-11
- Inventor: Hitoshi Kato , Manabu Honma
- Applicant: Hitoshi Kato , Manabu Honma
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2008-307825 20081202
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/455 ; C23C16/44 ; C23C16/40

Abstract:
In a film deposition apparatus, a first separation gas is discharged from a separation gas supplying portion to a separation area between a first process area to which a first reaction gas is supplied and a second process area to which a second reaction gas is supplied. A heater is provided to heat the turntable by radiation heat. An outer sidewall member is provided in a bottom part of a vacuum chamber to surround the turntable in an area where the heater is provided. A space forming member is provided between the separation areas adjacent to each other in a rotating direction of the turntable and extending from the outer sidewall member to form a narrow space between the turntable. A purge gas flows from a lower side of the turntable to an area outside the turntable in a radial direction through the narrow space.
Public/Granted literature
- US20100132615A1 FILM DEPOSITION APPARATUS Public/Granted day:2010-06-03
Information query
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