Invention Grant
- Patent Title: Apparatuses and methods of operating for memory endurance
- Patent Title (中): 运行记忆耐力的设备和方法
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Application No.: US14284825Application Date: 2014-05-22
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Publication No.: US09105350B2Publication Date: 2015-08-11
- Inventor: Chandra C. Varanasi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/10 ; G11C7/10

Abstract:
Methods of operating an apparatus such as a computing system and/or memory device for memory endurance are provided. One example method can include receiving m digits of data having a first quantity of digits represented by a first data state that is more detrimental to memory cell wear than a second data state. The m digits of data are encoded into n digits of data having a second quantity of digits represented by the first data state. The value n is greater than the value m. The second quantity is less than or equal to the first quantity. The n digits of data are stored in an apparatus having memory cells.
Public/Granted literature
- US20140337564A1 APPARATUSES AND METHODS OF OPERATING FOR MEMORY ENDURANCE Public/Granted day:2014-11-13
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