Invention Grant
US09105353B2 Memory device and semiconductor device including the memory device
有权
存储器件和包括存储器件的半导体器件
- Patent Title: Memory device and semiconductor device including the memory device
- Patent Title (中): 存储器件和包括存储器件的半导体器件
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Application No.: US13473831Application Date: 2012-05-17
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Publication No.: US09105353B2Publication Date: 2015-08-11
- Inventor: Tatsuji Nishijima
- Applicant: Tatsuji Nishijima
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2011-113968 20110520
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/412
Abstract:
A memory device includes a level shifter which includes a first input terminal, a second input terminal, a first output terminal configured to output a first signal, and a second output terminal configured to output an inverted signal of the first signal, a first buffer, a second buffer, a first node, and a second node. The first node, where an output terminal of the first buffer and the first input terminal of the level shifter are connected, is configured to hold a first data. The second node, where an output terminal of the second buffer and the second input terminal of the level shifter are connected, is configured to hold a second data.
Public/Granted literature
- US20120294096A1 Memory Device and Semiconductor Device Including the Memory Device Public/Granted day:2012-11-22
Information query
