Invention Grant
- Patent Title: Forming a characterization parameter of a resistive memory element
- Patent Title (中): 形成电阻式存储元件的表征参数
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Application No.: US13789123Application Date: 2013-03-07
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Publication No.: US09105360B2Publication Date: 2015-08-11
- Inventor: Ryan James Goss , Mark Allen Gaertner , Antoine Khoueir , David Scott Ebsen , Jon D. Trantham
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hollingsworth Davis, LLC
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C29/50 ; G06F11/10 ; G11C13/00

Abstract:
An incremental signal is defined that includes at least one of a duration and a peak voltage that is less than a respective minimum programming time or minimum programming voltage step of a resistive memory element. A characterization procedure is repeatedly performed that at least involves: applying a signal to the memory element, the signal being incremented by the incremental signal during each subsequent application; measuring a first resistance of the memory element in response to the signal; and c) measuring a second resistance of the memory element after a time period has elapsed from the measurement of the first resistance with no programming signal applied. In response to the first and second resistance measurements of the characterization procedure, a characterization parameter of the memory element is formed.
Public/Granted literature
- US20140258646A1 FORMING A CHARACTERIZATION PARAMETER OF A RESISTIVE MEMORY ELEMENT Public/Granted day:2014-09-11
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