Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14249505Application Date: 2014-04-10
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Publication No.: US09105470B2Publication Date: 2015-08-11
- Inventor: Gerhard Noebauer , Christoph Kadow , Donald Dibra , Robert Illing
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/02

Abstract:
A switching component includes a control element and an integrated circuit. The integrated circuit includes a first transistor element and a second transistor element electrically connected in parallel to the first transistor element. The first transistor element includes first transistors, gate electrodes of which are disposed in first trenches in a first main surface of a semiconductor substrate. The second transistor element includes second transistors, gate electrodes of which are disposed in second trenches in the first main surface, and a second gate conductive line in contact with the gate electrodes in the second trenches. The control element is configured to control a potential applied to the second gate conductive line.
Public/Granted literature
- US20140332877A1 Semiconductor Device Public/Granted day:2014-11-13
Information query
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