Invention Grant
- Patent Title: Nanowire PIN tunnel field effect devices
- Patent Title (中): 纳米线PIN隧道场效应器件
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Application No.: US13556300Application Date: 2012-07-24
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Publication No.: US09105482B2Publication Date: 2015-08-11
- Inventor: Sarunya Bangsaruntip , Stephen J. Koester , Amlan Majumdar , Jeffrey W. Sleights
- Applicant: Sarunya Bangsaruntip , Stephen J. Koester , Amlan Majumdar , Jeffrey W. Sleights
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/04 ; B82Y10/00 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L29/739
Abstract:
A nanowire tunnel device includes a nanowire suspended above a semiconductor substrate by a first pad region and a second pad region, the nanowire having a channel portion surrounded by a gate structure disposed circumferentially around the nanowire, an n-type doped region including a first portion of the nanowire adjacent to the channel portion, and a p-type doped region including a second portion of the nanowire adjacent to the channel portion.
Public/Granted literature
- US20120286242A1 NANOWIRE PIN TUNNEL FIELD EFFECT DEVICES Public/Granted day:2012-11-15
Information query
IPC分类:
