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US09105514B2 Three-dimensional non-volatile memory device, memory system including the same, and method of manufacturing the same 有权
三维非易失性存储器件，包括其的存储器系统及其制造方法

  • Patent Title: Three-dimensional non-volatile memory device, memory system including the same, and method of manufacturing the same
  • Patent Title (中): 三维非易失性存储器件，包括其的存储器系统及其制造方法
  • Application No.: US13601121
    Application Date: 2012-08-31
  • Publication No.: US09105514B2
    Publication Date: 2015-08-11
  • Inventor: Hack Seob Shin
  • Applicant: Hack Seob Shin
  • Applicant Address: KR Gyeonggi-do
  • Assignee: SK Hynix Inc.
  • Current Assignee: SK Hynix Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: William Park & Asssociates Ltd.
  • Priority: KR10-2011-0108916 20111024
  • Main IPC: G11C5/02
  • IPC: G11C5/02 ;  H01L27/115
Three-dimensional non-volatile memory device, memory system including the same, and method of manufacturing the same
Abstract:
A 3D non-volatile memory device including a substrate that includes a first region and a second region; a pipe channel film that is formed on the substrate in the first region; a pipe gate that substantially encloses the pipe channel film; and a driving gate that is formed on the substrate in the second region and has at least one dummy pattern.
Abstract(Chinese):

一种3D非易失性存储器件，包括包括第一区域和第二区域的衬底; 在所述第一区域中形成在所述基板上的管道膜; 基本上封闭管道膜的管道浇口; 以及形成在所述第二区域中的所述基板上并且具有至少一个虚设图案的驱动栅极。

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