A silicon carbide semiconductor device includes: a semiconductor substrate made of silicon carbide single crystal and having a principal surface and a backside; and an ohmic electrode contacting one of the principal surface and the backside of the semiconductor substrate in an ohmic manner. A boundary between the ohmic electrode and the one of the principal surface and the backside of the semiconductor substrate is terminated with an element, which has a Pauling electronegativity larger than silicon and a binding energy with silicon larger than a binding energy of Si—H.