Invention Grant
- Patent Title: Via-fuse with low dielectric constant
- Patent Title (中): 具有低介电常数的保险丝
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Application No.: US14076333Application Date: 2013-11-11
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Publication No.: US09105638B2Publication Date: 2015-08-11
- Inventor: Junjing Bao , Griselda Bonilla , Samuel S. Choi , Ronald G. Filippi , Wai-Kin Li , Naftali E. Lustig , Andrew H. Simon
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Catherine Ivers
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L21/768 ; H01L23/522
Abstract:
In an embodiment of the present invention, a semiconductor device comprises a non-fuse area that has a non-fuse via, a non-fuse line, and a non-fuse dielectric stack. The semiconductor device further comprises a fuse area that has a fuse via, a fuse line, and a fuse dielectric stack. The fuse dielectric stack comprises at least a first dielectric and a second dielectric material. The fuse via is at least partially embedded in the first dielectric material and the fuse line is embedded in the second dielectric material.
Public/Granted literature
- US20150130018A1 VIA-FUSE WITH LOW DIELECTRIC CONSTANT Public/Granted day:2015-05-14
Information query
IPC分类:
