Invention Grant
- Patent Title: Interlevel dielectric stack for interconnect structures
- Patent Title (中): 用于互连结构的层间电介质叠层
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Application No.: US14286008Application Date: 2014-05-23
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Publication No.: US09105642B2Publication Date: 2015-08-11
- Inventor: Griselda Bonilla , Alfred Grill , Thomas J. Haigh, Jr. , Satyanarayana V. Nitta , Son Nguyen
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Catherine Ivers
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/532 ; H01L21/768 ; H01L21/02

Abstract:
A dielectric stack and method of depositing the stack to a substrate using a single step deposition process. The dielectric stack includes a dense layer and a porous layer of the same elemental compound with different compositional atomic percentage, density, and porosity. The stack enhances mechanical modulus strength and enhances oxidation and copper diffusion barrier properties. The dielectric stack has inorganic or hybrid inorganic-organic random three-dimensional covalent bonding throughout the network, which contain different regions of different chemical compositions such as a cap component adjacent to a low-k component of the same type of material but with higher porosity.
Public/Granted literature
- US20140256154A1 INTERLEVEL DIELECTRIC STACK FOR INTERCONNECT STRUCTURES Public/Granted day:2014-09-11
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