Invention Grant
- Patent Title: Microelectronic structure including air gap
- Patent Title (中): 微电子结构包括气隙
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Application No.: US13614563Application Date: 2012-09-13
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Publication No.: US09105693B2Publication Date: 2015-08-11
- Inventor: Daniel C. Edelstein , David V. Horak , Elbert E. Huang , Satyanarayana V. Nitta , Takeshi Nogami , Shom Ponoth , Terry A. Spooner
- Applicant: Daniel C. Edelstein , David V. Horak , Elbert E. Huang , Satyanarayana V. Nitta , Takeshi Nogami , Shom Ponoth , Terry A. Spooner
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/4763 ; H01L21/768
Abstract:
A microelectronic structure and a method for fabricating the microelectronic structure provide a plurality of voids interposed between a plurality of conductor layers. The plurality of voids is also located between a liner layer and an inter-level dielectric layer. The voids provide for enhanced electrical performance of the microelectronic structure.
Public/Granted literature
- US20130012017A1 MICROELECTRONIC STRUCTURE INCLUDING AIR GAP Public/Granted day:2013-01-10
Information query
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