Invention Grant
- Patent Title: Silicon carbide substrate, semiconductor device, and methods for manufacturing them
- Patent Title (中): 碳化硅衬底，半导体器件及其制造方法
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Application No.: US13540673Application Date: 2012-07-03
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Publication No.: US09105756B2Publication Date: 2015-08-11
- Inventor: Keiji Ishibashi
- Applicant: Keiji Ishibashi
- Applicant Address: JP Osaka-shi, Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka-shi, Osaka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2011-158608 20110720
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/872 ; H01L29/66 ; H01L29/868 ; H01L29/04 ; H01L29/16
Abstract:
A silicon carbide substrate capable of reducing on-resistance and improving yield of semiconductor devices is made of single-crystal silicon carbide, and sulfur atoms are present in one main surface at a ratio of not less than 60×1010 atoms/cm2 and not more than 2000×1010 atoms/cm2, and oxygen atoms are present in the one main surface at a ratio of not less than 3 at % and not more than 30 at %.
Public/Granted literature
- US20130020585A1 SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THEM Public/Granted day:2013-01-24
Information query
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