Invention Grant
- Patent Title: Semiconductor light emitting device and manufacturing method thereof
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Application No.: US14607851Application Date: 2015-01-28
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Publication No.: US09105762B2Publication Date: 2015-08-11
- Inventor: Jae Yoon Kim , Jin Bock Lee , Seok Min Hwang , Su Yeol Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Seoul
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2010-0104215 20101025
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00

Abstract:
A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.
Public/Granted literature
- US20150140707A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-05-21
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