Invention Grant
- Patent Title: Micro-light-emitting diode
- Patent Title (中): 微型发光二极管
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Application No.: US14290999Application Date: 2014-05-30
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Publication No.: US09105813B1Publication Date: 2015-08-11
- Inventor: Pei-Yu Chang
- Applicant: MIKRO MESA TECHNOLOGY CO., LTD.
- Applicant Address: WS Apia
- Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
- Current Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
- Current Assignee Address: WS Apia
- Agency: CKC & Partners Co., Ltd.
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/44 ; H01L33/20

Abstract:
A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor, a first dielectric layer, and a first electrode. The second type semiconductor layer is disposed on or above the first type semiconductor layer. The first dielectric layer is disposed on the second type semiconductor layer. The first dielectric layer has at least one opening therein to expose at least one part of the second type semiconductor layer. A first shortest distance between an edge of the opening of the first dielectric layer and a side surface of the second type semiconductor layer is greater than or equal to 1 μm. The first electrode is partially disposed on the first dielectric layer and is electrically coupled with the exposed part of the second type semiconductor layer through the opening of the first dielectric layer.
Information query
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