Invention Grant
- Patent Title: Nonvolatile magnetic element and nonvolatile magnetic device
- Patent Title (中): 非易失磁性元件和非易失磁性元件
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Application No.: US14234547Application Date: 2012-06-13
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Publication No.: US09105831B2Publication Date: 2015-08-11
- Inventor: Shunsuke Fukami , Daichi Chiba
- Applicant: Shunsuke Fukami , Daichi Chiba
- Applicant Address: JP Tokyo JP Kyoto
- Assignee: NEC CORPORATION,KYOTO UNIVERSITY
- Current Assignee: NEC CORPORATION,KYOTO UNIVERSITY
- Current Assignee Address: JP Tokyo JP Kyoto
- Agency: Young & Thompson
- Priority: JP2011-133897 20110616
- International Application: PCT/JP2012/065674 WO 20120613
- International Announcement: WO2012/173279 WO 20121220
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/02 ; H01L43/08 ; H01L27/22 ; G11C11/16

Abstract:
Provided is a nonvolatile magnetic device that is capable of realizing low power consumption by performing writing with a voltage and is also excellent in retention characteristics. The nonvolatile magnetic device includes a nonvolatile magnetic element. The nonvolatile magnetic element includes: a first free layer made of a ferromagnetic substance; a first insulating layer made of an insulator, the first insulating layer being provided to be connected to the first free layer; a charged layer provided adjacent to the first insulating layer; a second insulating layer made of an insulator, the second insulating layer being provided adjacent to the charged layer; and an injection layer provided adjacent to the second insulating layer. The charged layer is smaller in electric resistivity than both of the first insulating layer and the second insulating layer. The injection layer is smaller in electric resistivity than the second insulating layer.
Public/Granted literature
- US20140159121A1 NONVOLATILE MAGNETIC ELEMENT AND NONVOLATILE MAGNETIC DEVICE Public/Granted day:2014-06-12
Information query
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