Invention Grant
- Patent Title: Power semiconductor device
- Patent Title (中): 功率半导体器件
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Application No.: US13677028Application Date: 2012-11-14
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Publication No.: US09106156B2Publication Date: 2015-08-11
- Inventor: Tomofumi Tanaka , Toru Iwagami
- Applicant: Tomofumi Tanaka , Toru Iwagami
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2011-272961 20111214
- Main IPC: H02M1/088
- IPC: H02M1/088 ; H02M7/537 ; H02M7/00

Abstract:
Among first IGBTs and first MOSFETs, a transistor arranged near a first gate control circuit gives, through a gate thereof, a gate control signal supplied from the first gate control circuit to a gate of a transistor arranged at a position farther from the first gate control circuit. Among second IGBTs and second MOSFETs, a transistor arranged near a second gate control circuit gives, through a gate thereof, a gate control signal supplied from the second gate control circuit to a gate of a transistor arranged at a position farther from the second gate control circuit.
Public/Granted literature
- US20130155745A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2013-06-20
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