Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14250623Application Date: 2014-04-11
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Publication No.: US09106224B2Publication Date: 2015-08-11
- Inventor: Atsushi Umezaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2011-108133 20110513
- Main IPC: G05F1/10
- IPC: G05F1/10 ; H03K17/081 ; G09G3/20 ; G11C19/18 ; G11C19/28 ; H03K19/0185

Abstract:
Provided is a semiconductor device which can operate stably even in the case where a transistor thereof is a depletion transistor. The semiconductor device includes a first transistor for supplying a first potential to a first wiring, a second transistor for supplying a second potential to the first wiring, a third transistor for supplying a third potential at which the first transistor is turned on to a gate of the first transistor and stopping supplying the third potential, a fourth transistor for supplying the second potential to the gate of the first transistor, and a first circuit for generating a second signal obtained by offsetting a first signal. The second signal is input to a gate of the fourth transistor. The potential of a low level of the second signal is lower than the second potential.
Public/Granted literature
- US20140247070A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-09-04
Information query
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