Invention Grant
- Patent Title: Adaptive MOS transistor gate driver and method therefor
- Patent Title (中): 自适应MOS晶体管栅极驱动器及其方法
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Application No.: US14259976Application Date: 2014-04-23
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Publication No.: US09106228B2Publication Date: 2015-08-11
- Inventor: Pierre Andre Genest
- Applicant: Semiconductor Components Industries, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H03K19/0185
- IPC: H03K19/0185 ; H03K17/16

Abstract:
In an embodiment, a gate driver circuit and/or method therefor may include configuring the gate driver circuit form a drive current to supply to a gate of an MOS transistor wherein the value of the drive current is a minimum value that can be supplied to the gate without increasing a charge stored on a gate-to-source capacitance of the MOS transistor; configuring the gate driver circuit to change the value of the drive current responsively to changes of a Vgs of the MOS transistor.
Public/Granted literature
- US20140375376A1 ADAPTIVE MOS TRANSISTOR GATE DRIVER AND METHOD THEREFOR Public/Granted day:2014-12-25
Information query
IPC分类: