Invention Grant
- Patent Title: Etching method for manufacturing MEMS device
- Patent Title (中): 用于制造MEMS器件的蚀刻方法
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Application No.: US14316769Application Date: 2014-06-26
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Publication No.: US09107017B1Publication Date: 2015-08-11
- Inventor: Yu-Hsiang Chiu , Jeng-Ho Wang , Hsin-Yi Lu , Chang-Sheng Hsu
- Applicant: UNITED MICROELECTRONICS CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corporation
- Current Assignee: United Microelectronics Corporation
- Current Assignee Address: TW Hsinchu
- Agent Ding Yu Tan
- Priority: CN201410241849 20140603
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H04R31/00 ; H01L21/304

Abstract:
An etching method for manufacturing MEMS devices is provided. The method includes steps of: providing a substrate including a first surface and a second surface opposite to the first surface, wherein a base structure, a sacrificial structure and at least one adhesion layer are arranged on the first surface of the substrate, the adhesion layer is disposed between the base structure and the sacrificial structure, the base structure is disposed between the adhesion layer and the substrate; performing a surface grinding process on the second surface of the substrate; performing a first plasma etching process by using a first mixed gas to remove the sacrificial structure, wherein the first mixed gas includes oxygen and a first nitrogen-based gas; and performing a second plasma etching process by using a second mixed gas to remove the adhesion layer, wherein the second mixed gas includes a second nitrogen-based base gas and a fluorine-based gas.
Information query
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