Invention Grant
- Patent Title: Via structure in multi-layer substrate
- Patent Title (中): 多层基板中的通孔结构
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Application No.: US12582647Application Date: 2009-10-20
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Publication No.: US09107315B2Publication Date: 2015-08-11
- Inventor: Chih-kuang Yang
- Applicant: Chih-kuang Yang
- Applicant Address: AE Dubai
- Assignee: PRINCO MIDDLE EAST FZE
- Current Assignee: PRINCO MIDDLE EAST FZE
- Current Assignee Address: AE Dubai
- Priority: TW097142237A 20081031
- Main IPC: H05K1/11
- IPC: H05K1/11 ; H05K3/40 ; H05K1/03 ; H05K3/04

Abstract:
Disclosed is a via structure in a multi-layer substrate, comprising a first metal layer, a dielectric layer and a second metal layer. The first metal layer has an upper surface. The dielectric layer covers the first metal layer in which a via is opened to expose the upper surface. The second metal layer is formed in the via and contacts an upper surface and an inclined wall of the via. A contacting surface of the second metal layer has a top line lower than the upper edge of the inclined wall. Alternatively, the second metal layer can be formed on the dielectric layer as being a metal line simultaneously as formed in the via as being a pad. The metal line and the pad are connected electronically. The aforesaid metal second layer can be formed in the via and on the dielectric layer by a metal lift-off process.
Public/Granted literature
- US20100108363A1 VIA STRUCTURE IN MULTI-LAYER SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-05-06
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