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US09109281B2 Metal heterocyclic compounds for deposition of thin films 有权
用于沉积薄膜的金属杂环化合物

Metal heterocyclic compounds for deposition of thin films
Abstract:
Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate.
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